Vishay Introduces New MOSFET with Lowest On-Resistance

VISHAY low resistance 593D107X9016D2TE3 tantalum capacitor original spot

Recently, Vishay Intertechnology, Inc. (NYSE: VSH) announced the launch of its new -30V, 12V VGS P-channel TrenchFETTM power MOSFET, the SiA453EDJ , in an ultra-small, thermally enhanced PowerPAK® SC-70 package. The device is a -30V device with a 2mm x 2mm footprint and the industry's lowest on- resistance at -4.5V and -2.5V gate drive, saving space and increasing energy efficiency in portable electronics.

The Vishay Siliconix -30V VDS device released on April 29, 2014 has the margin needed to withstand overvoltage spikes, and its 12V VGS allows the device to have lower on- resistance at -3.7V and -2.5V, available For ultra-portable, battery-powered products. MOSFETs are suitable for load and input in handheld consumer electronics such as smartphones, tablets, mobile computing devices, non-implantable portable medical products, hard drives, and electric toothbrushes, razors, scanners and RFID readers. Pressure protection switch, battery charger, DC/DC converter. For these applications, the SiA453EDJ offers extremely low on- resistance of 18.5mΩ (-10V), 23.5mΩ (-4.5V), 26.0mΩ (-3.7V) and 37.7mΩ (-2.5V) with built-in ESD protection up to 4000V .

SiA453EDJ data sheet link address: http://datasheet.eepw.com.cn/datasheet/show/id/3121118

The on-resistance of the SiA453EDJ at 4.5V is 36% lower than the closest -30V device and 50% lower than the closest device using the 12V VGS. The on-resistance of the MOSFET at -2.5V is 46% lower than that of the 12V VGS device that is second only to this device. These lowest values ​​in the industry enable designers to achieve lower voltage drops in their circuits, use power more efficiently, and extend battery life. The device's small size PowerPAK SC-70 package saves very important PCB space.

The MOSFET is 100% Rg and UIS tested, meets the halogen-free regulations of JEDEC JS709A, and complies with the RoHS Directive 2011/65/EU.